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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13007 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak ANG CH E SEM Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 8 16 4 8 12 24 UNIT V V V A A A A A A W ae ae Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 80 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=2A; IB=0.4A IC=5A ;IB=1.0A TC=100ae IC=8A ;IB=2.0A IC=2A ;IB=0.4A IC=5A ;IB=1.0A TC=100ae VCB=700V; IE=0 TC=125ae VEB=9V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V 8 5 MIN 400 MJE13007 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 1.0 2.0 3.0 3.0 1.2 1.6 1.5 0.1 1.0 0.1 V V V V V mA mA Rise time Transition frequency Collector outoput capacitance Switching times resistive load td tr ts tf Delay time INC Fall time E SEM ANG H IC=0.5A ; VCE=10V;f=1MHz IE=0; f=0.1MHz ; VCB=10V OND IC TOR UC 30 4 80 0.1 1.5 3.0 0.7 40 MHz pF |I |I |I |I s s s s Storage time VCC=125V ,IC=5A IB1=-IB2=1.0A tp=25|I s duty cycleU 1% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE13007 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 CHA IN E SEM NG OND IC TOR UC 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 CHA IN E SEM NG OND IC TOR UC 5 |
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